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ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING

Year 2004, Volume: 17 Issue: 1, 31 - 35, 11.08.2010

Mehmet Kasap Selim Acar Bora Alkan

Abstract

To explain the behavior of Hall mobility versus temperature T behavior in In0.51Ga0.49As and In0.60Ga0.40As detailed calculations have been carried out based on Kubo formula by taking the dislocation scattering as the dominant scattering mechanism. A good agreement has been obtained between the theory and the experiment.

 Key Words: Hall mobility, dislocation scattering, Kubo formula

 

Keywords

Hall mobility dislocation scattering Kubo formula

Year 2004, Volume: 17 Issue: 1, 31 - 35, 11.08.2010

Mehmet Kasap Selim Acar Bora Alkan

Abstract

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Details

Primary Language English
Journal Section Physics
Authors

Mehmet Kasap This is me

Selim Acar

Bora Alkan This is me

Publication Date August 11, 2010
Published in Issue Year 2004 Volume: 17 Issue: 1

Cite

APA Kasap, M., Acar, S., & Alkan, B. (2010). ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING. Gazi University Journal of Science, 17(1), 31-35.
AMA Kasap M, Acar S, Alkan B. ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING. Gazi University Journal of Science. August 2010;17(1):31-35.
Chicago Kasap, Mehmet, Selim Acar, and Bora Alkan. “ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING”. Gazi University Journal of Science 17, no. 1 (August 2010): 31-35.
EndNote Kasap M, Acar S, Alkan B (August 1, 2010) ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING. Gazi University Journal of Science 17 1 31–35.
IEEE M. Kasap, S. Acar, and B. Alkan, “ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING”, Gazi University Journal of Science, vol. 17, no. 1, pp. 31–35, 2010.
ISNAD Kasap, Mehmet et al. “ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING”. Gazi University Journal of Science 17/1 (August 2010), 31-35.
JAMA Kasap M, Acar S, Alkan B. ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING. Gazi University Journal of Science. 2010;17:31–35.
MLA Kasap, Mehmet et al. “ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING”. Gazi University Journal of Science, vol. 17, no. 1, 2010, pp. 31-35.
Vancouver Kasap M, Acar S, Alkan B. ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING. Gazi University Journal of Science. 2010;17(1):31-5.